Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices

Applied Physics Letters

Volumn 72, Issue 6, 1998, Pages 698-700

  Edwards, Hal ^a   McGlothlin, Rudye ^a   San Martin, Richard ^a   U, Elisa ^a   Gribelyuk, Michael ^a   Mahaffy, Rachel ^b   Ken Shih, C ^b   List, R Scott ^a   Ukraintsev, Vladimir A ^a  

^a TEXAS INSTRUMENTS   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRONS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPECTROSCOPY;

CAPACITANCE VOLTAGE CHARACTERISTICS; METAL OXIDE SEMICONDUCTOR CAPACITOR; SCANNING CAPACITANCE SPECTROSCOPY;

SEMICONDUCTOR JUNCTIONS;

EID: 0032498462     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120849     Document Type: Article

References (11)

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