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Volumn 75, Issue 12, 1999, Pages 1793-1795

Patterning and switching of nanosize ferroelectric memory cells

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; FERROELECTRIC DEVICES; FERROELECTRICITY; HYSTERESIS; LEAD COMPOUNDS; NANOSTRUCTURED MATERIALS; PIEZOELECTRICITY; SHAPE MEMORY EFFECT;

EID: 0032613316     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124822     Document Type: Article
Times cited : (153)

References (16)
  • 8
    • 85034172283 scopus 로고    scopus 로고
    • 2 for SBT. The structures were developed by immersing the exposed sample 1 min in toluene and were dried by blowing with nitrogen
    • 2 for SBT. The structures were developed by immersing the exposed sample 1 min in toluene and were dried by blowing with nitrogen.
  • 9
    • 85034182597 scopus 로고    scopus 로고
    • During the pyrolysis the lateral dimensions of one mesa decrease and this shrinkage process continues during the crystallization anneal. For PZT 30% shrinkage is observed after the pyrolysis and a total shrinkage of about 45% after crystallization
    • During the pyrolysis the lateral dimensions of one mesa decrease and this shrinkage process continues during the crystallization anneal. For PZT 30% shrinkage is observed after the pyrolysis and a total shrinkage of about 45% after crystallization.
  • 16
    • 85034193805 scopus 로고    scopus 로고
    • Due to the tip shape (triangular with an apex radius ∼50 nm) piezoelectric images of structures under 250 nm lateral size are highly distorted, but still show a piezoelectric contrast revealing switching process
    • Due to the tip shape (triangular with an apex radius ∼50 nm) piezoelectric images of structures under 250 nm lateral size are highly distorted, but still show a piezoelectric contrast revealing switching process.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.