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GB barrier heights (for hole transport) ranging from 0.1 to -0.8 eV were reported for p-CdTe (in the dark), depending on processing conditions and doping concentrations [cf. O. Vigil-Galán, L. Valliant, R. Mendoza-Pérez, G. Contreras-Puente, and J. Vidal-Larramendi, J. Appl. Phys. 90, 3427 (2001); L. M. Woods, D. H. Levi, V. Kaydanov, G. Y. Robinson, and R. K. Ahrenkiel, in Proc. 2nd World Conference on PV Solar Energy Conversion, edited by J. Schmid, H. A. Ossenbrink, P. Helm, H. Ehmann, and E. D. Dunlop, EU, 1998, pp. 1043-1046; T. P. Thorpe, Jr., A. L. Fahrenbruch, and R. H. Bube, J. Appl. Phys. 60, 3622 (1986)].
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0035477531
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edited by J. Schmid, H. A. Ossenbrink, P. Helm, H. Ehmann, and E. D. Dunlop, EU
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GB barrier heights (for hole transport) ranging from 0.1 to -0.8 eV were reported for p-CdTe (in the dark), depending on processing conditions and doping concentrations [cf. O. Vigil-Galán, L. Valliant, R. Mendoza-Pérez, G. Contreras-Puente, and J. Vidal-Larramendi, J. Appl. Phys. 90, 3427 (2001); L. M. Woods, D. H. Levi, V. Kaydanov, G. Y. Robinson, and R. K. Ahrenkiel, in Proc. 2nd World Conference on PV Solar Energy Conversion, edited by J. Schmid, H. A. Ossenbrink, P. Helm, H. Ehmann, and E. D. Dunlop, EU, 1998, pp. 1043-1046; T. P. Thorpe, Jr., A. L. Fahrenbruch, and R. H. Bube, J. Appl. Phys. 60, 3622 (1986)].
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