Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 361-368

  De Wolf, P ^a,c   Stephenson, R ^a   Trenkler, T ^a   Clarysse, T ^a   Hantschel, T ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Digital Instruments   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; DOPING (ADDITIVES); SCANNING TUNNELING MICROSCOPY; SPECTROSCOPIC ANALYSIS;

CURRENT IMAGING TUNNELING SPECTROSCOPY (CITS); KELVIN PROBE FORCE MICROSCOPY (KPM); SCANNING CAPACITANCE MICROSCOPY (SCM); SCANNING PROBE MICROSCOPY (SPM); SCANNING SPREADING RESISTANCE MICROSCOPY (SSRM); SCANNING SURFACE HARMONIC MICROSCOPY (SSHM); SCANNING TUNNELING SPECTROSCOPY (STS);

SEMICONDUCTOR DEVICES;

EID: 0033698091     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591198     Document Type: Article

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