Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

Nano Letters

Volumn 2, Issue 7, 2002, Pages 761-764

  Radosavljevic M ^a,b   Freitag, M ^a   Thadani, K V ^a   Johnson, A T ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000680281     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl025584c     Document Type: Article

References (32)

1. Tans, S. J.; Verschueren, R. M.; Dekker, C. Nature 1998, 393, 49.
2. Martel, R.; Schmidt, T.; Hertel, T.; Avouris, Ph. Appl. Phys. Lett. 1998, 73, 2447.
3. Collins, P. G.; Bradley, K.; Ishigami, M.; Zettl, A. Science 2000, 287, 1801.
4. Freitag, M. et al. Appl. Phys. Lett. 2001, 79, 3326.
5. Martel, R. et al. Phys. Rev. Lett. 2001, 87, 256805.
6. Derycke, V.; Martel, R.; Appenzeller, J.; Avouris, Ph. Nano Lett. 2001, 1, 453.
7. Derycke, V.; Martel, R.; Appenzeller, J.; Avouris, Ph. Appl. Phys. Lett. 2002, 80, 2773.
8. Bachtold, A.; Hadley, P.; Nakanishi, T.; Dekker, C. Science 2001, 294, 1317.
9. Liu, X.; Lee, C.; Zhou, C.; Han, J. Appl. Phys. Lett. 2001, 79, 3329.
10. Bockrath, M. et al. Phys. Rev. B 2000, 61, R10606.
11. Kong, J. et al. Nature 1998, 395, 878.
12. Hafner, J. H.; Cheung, C. L.; Lieber, C. M. Nature 1999, 398, 761.
13. Snyder, C. E. et al. Int. Pat. 1989, WO 9/07163.
14. Wolf, S.; Tauber, R. N. Silicon Processing for the VLSI Era; Lattice Press: Sunset Beach, CA, 1986.
15. Tans, S. J.; Dekker, C. Nature 2000, 404, 834.
16. Bachtold, A. et al. Phys. Rev. Lett. 2000, 84, 6082.
17. Freitag, M.; Radosavljević, M.; Clauss, W.; Johnson, A. T. Phys. Rev. B 2000, 62, R2307.
18. CRC Handbook of Chemistry and Physics, 82nd ed.; CRC Press: Cleveland, OH, 2001.
19. Martel, R.; Wong, H.-S. P.; Chan, K.; Avouris, Ph. IEDM 2001, 159.
20. Radosavljević, M. Ph.D. Dissertation, University of Pennsylvania 2001.
21. Park, J.; McEuen, P. L. Appl. Phys. Lett. 2001, 79, 1363.
22. Sze, S. M. Semiconductor Devices, Physics and Technology; John Wiley and Sons: New York, 1985.
23. Krüger, M. et al. Appl. Phys. Lett. 2001, 78, 1291.
24. McEuen, P. L. et al. Phys. Rev. Lett. 1999, 83, 5098.
25. Kouwenhoven, L. P.; Marcus, C. M.; McEuen, P. L.; Tarucha, S.; Westervelt, R. M.; Wingreen, N. S. In Mesoscopic Electron Transport; Plenum: New York, 1997; pp 105-214.
26. Bockrath, M. et al. Science 1997, 275, 1922.
27. o/ln(2h/r) or 21aF/μm = 130e/μm-V for our devices.
28. -6 Torr vacuum.
29. Horowitz, P.; Hill, W. The Art of Electronics; Cambridge University Press: New York, 1980.
30. Lefebvre, J.; Radosavljević, M.; Johnson, A. T. Appl. Phys. Lett. 2000, 76, 3828.
31. Guo, L.; Leobandung, E.; Chou, S. Y. Science 1997, 274, 2069.
32. Fuhrer, M. S.; Kim, B. M.; Durkop, T.; Brintlinger, T. Nano Letters, 2002, 2, 755.