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Volumn 85, Issue 5, 1999, Pages 2465-2472

Electrostatic force microscopy studies of surface defects on GaAs/Ge films

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000472116     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369622     Document Type: Article
Times cited : (45)

References (35)
  • 10
    • 85034497254 scopus 로고    scopus 로고
    • note
    • s" is referred to as the surface contact potential specifically with respect to the tip, while "SCP" is referred to as the surface contact potential in a general sense (without a specific reference).
  • 16
    • 85034510819 scopus 로고    scopus 로고
    • note
    • ac < 2 V.
  • 17
    • 85034491133 scopus 로고    scopus 로고
    • note
    • ac is around 1 V.
  • 18
    • 85034499339 scopus 로고    scopus 로고
    • note
    • 2 images [Figs. 2(c) and 2(f)] is also around 30 nm.
  • 32
    • 85034496743 scopus 로고    scopus 로고
    • note
    • s difference is reproducible among different tips, the tip sizes cannot vary too much. The reasonable tip radius is 20-30 nm.
  • 35
    • 85034519374 scopus 로고    scopus 로고
    • note
    • -2.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.