Switching properties of self-assembled ferroelectric memory cells

Applied Physics Letters

Volumn 75, Issue 8, 1999, Pages 1158-1160

  Alexe, M ^a   Gruverman, A ^b   Harnagea, C ^a   Zakharov, N D ^a   Pignolet, A ^a   Hesse, D ^a   Scott, J F ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b SONY CORPORATION   (Japan)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC FILMS; ELECTRODES; PIEZOELECTRICITY; RANDOM ACCESS STORAGE; SWITCHING;

FERROELECTRIC MEMORY CELLS;

FERROELECTRIC DEVICES;

EID: 0032621923     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124628     Document Type: Article

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