Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 88-98

  Henning, A K ^a,b   Hochwitz, T ^b  

^a Redwood Microsystems Inc   (United States)

^b DARTMOUTH COLLEGE   (United States)

Author keywords

Atomic force microscope; Dopant profiling; Electrostatic force microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; FAILURE ANALYSIS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

DOPANT PROFILING TECHNIQUES; ELECTROSTATIC FORCE MICROSCOPY (EFM); SCANNING DIFFERENTIAL CAPACITANCE MICROSCOPY (SDCM); SCANNING PROBE MICROSCOPY (SPM); SURFACE TOPOGRAPHY;

SEMICONDUCTOR DOPING;

EID: 0002312029     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01688-1     Document Type: Article

References (33)

1. C. Hill, Proc. Euro. Solid State Device Research Conference, Adam Hilger, Bristol, UK, 1990, p. 53.
2. R. Subrahmanyan, J. Vac. Sci. Technol. B, 10 (1992) 358.
3. S.H. Goodwin-Johansson et al., J. Vac. Sci. Technol. B, 10 (1992) 369.
4. M.G. Dowsett and G.A. Cooke, J. Vac. Sci. Technol. B, 10 (1992) 353.
5. R. Subrahmanyan, H.Z. Massoud and R.B. Fair, J. Electrochem. Soc., 137 (1990) 1573.
6. C.C. Williams et al., Appl. Phys. Lett., 55 (1989) 1662.
7. J. Slinkman et al., International Electron Devices Meeting, Dig. Tech. Pup., IEEE, Piscataway, NJ, 1990, p. 73.
8. G. Neubauer et al., J. Vac. Sci. Technol. B, 14 (1996) 426.
9. J.J. Kopanski, J.F. Marchiando and J.R. Lowney, J. Vac. Sci. Technol. B, 14 (1996) 242.
10. N. Khalil et al., IEEE Elec. Dev. Lett., 16 (1995) 17.
11. T. Takigami and M. Tanimoto, App. Phys. Lett., 58 (1991) 2288.
12. R. Avis et al., J. Vac. Sci. Technol. B, 14 (1996) 231.
13. M. Barrett et al., IEEE Elec. Dev. Lett., 16 (1995) 118.
14. C. Shafai et al., Appl. Phys. Lett., 64 (1994) 342.
15. C.B. Prater et al., J. Vac. Sci. Technol. B, 10 (1992) 1211.
16. T. Ohmi et al., IEEE Trans. Elec. Dev., 39 (1992) 537.
17. S. Gwo et al., Appl. Phys. Lett., 61 (1992) 1104.
18. G.E. Bridges, T.S. Forzley and D.J. Thomson, Microelectron. J., 23 (1992) 363.
19. C. Böhm et al., J. Phys. D, 26 (1993) 1801.
20. B.A. Nechay et al., J. Vac. Sci. Technol. B, 13 (1995) 1369.
21. A.K. Henning et al., J. Appl. Phys., 77 (1995) 1888.
22. T. Hochwitz, Implementation, Characterization, and Applications of a Scanning Kelvin Probe Force Microscope. PhD Dissertation, Dartmouth College, Hanover, NH, 1996.
23. M. Nonnenmacher, M.P. O'Boyle and H.K. Wickramasinghe, Appl. Phys. Lett., 58 (1991) 2921.
24. S. Sze, The Physics of Semiconductor Devices, Wiley, New York, 1981.
25. T. Hochwitz et al., J. Vac. Sci. Technol. B, 14 (1996) 440.
26. T. Hochwitz et al., J. Vac Sci. Technol. B, 14 (1996) 457.
27. T. Hochwitz et al., Proc. Int. Reliability Physics Symposium, IEEE, Piscataway, NJ, 1995, p. 217.
28. K.A. Salsburg, P.E. Cottrell and E.M. Buturla, Proc. NATO Adv. Study Inst. on Process and Device Simulation of MOS-VLSI Circuits, Martinus Nijhoff, The Hague, 1983, p. 582.
29. National technology roadmap for semiconductors, Semiconductor Industry Association, San Jose, CA, 1994.
30. J. Never, IBM Corporation, Essex Junction, VT. Private communication; P. Kaszuba ISTFA '95: Proc. 21st Int. Symp. Testing and Failure Analysis, ASM International, Materials Park, OH, 1995.
31. J. Never, IBM Corporation, Essex Junction, VT. Private communication; P. Kaszuba ISTFA '95: Proc. 21st Int. Symp. Testing and Failure Analysis, ASM International, Materials Park, OH, 1995.
32. A.K. Henning, Proc. Microlithography and Metrology in Micromachining, Vol. 2640, SPIE, Bellingham, WA, 1995, pp. 236-245.
33. H.K. Wickramasinghe et al., J. Phys. Coll., 44 (C-6) (1983) 191.