Local potential and polarization screening on ferroelectric surfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 12, 2001, Pages

  Kalinin, Sergei V ^a   Bonnell, Dawn A ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM DERIVATIVE; TITANIUM DERIVATIVE;

ARTICLE; ELECTRIC POTENTIAL; ELECTRICITY; ELECTRONICS; FORCE; MATHEMATICAL ANALYSIS; MICROSCOPY; PHASE TRANSITION; POLARIZATION; SCREENING;

EID: 0000723909     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.125411     Document Type: Article

References (63)

1. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer: Appl. Phys. Lett. 77, 139 (2000).
2. D. L. Polla and L. F. Francis: Annu. Rev. Mater. Sci. 28, 563 (1998).
3. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectric and Related Materials (Clarendon, Oxford, 1977).
4. Ferroelectric Ceramics, edited by N. Setter and E. L. Colla (Birkhauser-Verlag, Basel, 1993).
5. B. Jaffe, W. R. Cook, Jr., and H. Jaffe, Piezoelectric Ceramics (Academic, New York, 1971).
6. Ceramic Materials for Electronics, edited by R. Buchanan (Marcel Dekker, New York, 1991).
7. Electronic Ceramics: Properties, Devices and Applications, edited by L. M. Levinson (Marcel Dekker, New York, 1988).
8. V. P. Dudkevich, I. N. Zakharchenko, and E. G. Fesenko: Ferroelectrics 18, 185 (1978).
9. U. T. Hoechli and D. W. Pohl: Ferroelectrics 13, 403 (1976).
10. Z. Surowiak, P. Wawrzala, and V. P. Dudkevich: Surf. Rev. Lett. 5, 409 (1998).
11. V. Z. Borodin and E. Y. Schneider: Ferroelectrics 13, 407 (1976).
12. I. I. Ivanchik: Ferroelectrics 145, 149 (1993).
13. Y. G. Wang, J. Dec, and W. Kleemann: J. Appl. Phys. 84, 6795 (1998).
14. A. L. Gruverman, J. Hatano, and H. Tokumoto: Jpn. J. Appl. Phys. 36, 2207 (1997).
15. M. Takashige, S.-I. Hamazaki, N. Fukurai, F. Shimizu, and S. Kojima: Jpn. J. Appl. Phys. 35, 5181 (1996).
16. M. Takashige, S.-I. Hamazaki, F. Shimizu, and S. Kojima: Ferroelectrics 196, 211 (1997).
17. S. Balakumar, J. B. Xu, J. X. Ma, S. Ganesamoorthy, and I. H. Wilson: Jpn. J. Appl. Phys. 36, 5566 (1997).
18. G. K. H. Pang and K. Z. Baba-Kishi: J. Phys. D 31, 2846 (1998).
19. L. M. Eng, M. Friedrich, J. Fousek, and P. Günter: J. Vac. Sci. Technol. B 14, 1191 (1996).
20. H. Bluhm, U. D. Schwartz, and R. Wiesendanger: Phys. Rev. B 57, 161 (1998).
21. A. Correia, J. Massanell, N. Garcia, A. P. Levanyuk, A. Zlatkin, and J. Przeslawski: Appl. Phys. Lett. 68, 2796 (1996).
22. R. Lüthi, H. Haefke, K.-P. Meyer, E. Meyer, L. Howald, and H.-J. Güntherodt: J. Appl. Phys. 74, 7461 (1993).
23. R. Lüthi, H. Haefke, W. Gutmannsbauer, E. Meyer, L. Howald, and H.-J. Güntherodt: J. Vac. Sci. Technol. B 12, 2451 (1996).
24. B. D. Terris, J. E. Stern, D. Rugar, and H. J. Mamin: Phys. Rev. Lett. 63, 2669 (1989).
25. J. Ohgami, Y. Sugawara, S. Morita, E. Nakamura, and T. Ozaki: Jpn. J. Appl. Phys. 35, 2734 (1996).
26. L. M. Eng, J. Fousek, and P. Günter: Ferroelectrics 191, 211 (1997).
27. P. Lehnen, J. Dec, and W. Kleemann: J. Phys. D 33, 1932 (2000).
28. A. Gruverman, O. Auciello, and H. Tokumoto: J. Vac. Sci. Technol. B 14, 602 (1996).
29. O. Kolosov, A. Gruverman, J. Hatano, K. Takahashi, and H. Tokumoto: Phys. Rev. Lett. 74, 4309 (1995).
30. A. Gruverman, O. Auciello, and H. Tokumoto: Annu. Rev. Mater. Sci. 28, 101 (1998).
31. G. Zavala, J. H. Fendler, and S. Trolier-McKinstry: J. Appl. Phys. 81, 7480 (1997).
32. L. M. Eng, H.-J. Güntherodt, G. A. Schneider, U. Kopke, and J. Muñoz Saldaña: Appl. Phys. Lett. 74, 233 (1999).
33. S. V. Kalinin and D. A. Bonnell: Phys. Rev. B 62, 10419 (2000).
34. D. Sarid, Scanning Force Microscopy (Oxford University Press, New York, 1991).
35. C. Durkan, M. E. Welland, D. P. Chu, and P. Migliorato: Phys. Rev. B 60, 16198 (1999).
36. H. J. Ding, P. F. Hou, and F. L. Guo: Int. J. Solids Struct. 37, 3201 (2000).
37. V. Z. Parton and B. A. Kudryavtsev, Electromagnetoelasticity (Gordon and Breach, New York, 1988).
38. A. E. Giannakopoulos and S. Suresh: Acta Mater. 47, 2153 (1999).
39. S. A. Melkumyan and A. F. Ulitko: Prikl. Mat. Mekh. 23, 44 (1987).
40. E. Karapetian, I. Sevostianov, and M. Kachanov: Philos. Mag. B 80, 331 (2000).
41. A. Gruverman: Appl. Phys. Lett. 75, 1452 (1999).
42. C. S. Ganpule, V. Nagarjan, H. Li, A. S. Ogale, D. E. Steinhauer, S. Aggarwal, E. Williams, R. Ramesh, and P. DeWolf: Appl. Phys. Lett. 77, 292 (2000).
43. C. Durkan, D. P. Chu, P. Migliorato, and M. E. Welland: Appl. Phys. Lett. 76, 366 (2000).
44. K. Lee, H. Shin, W. K. Moon, J. U. Jeon, and Y. E. Park: Jpn. J. Appl. Phys. 38, L264 (1999).
45. K. Franke, H. Huelz, and M. Weihnacht: Surf. Sci. 415, 178 (1998).
46. L. M. Eng, H. J. Güntherodt, G. Rosenman, A. Skliar, M. Oron, M. Katz, and D. Eger: J. Appl. Phys. 83, 5973 (1998).
47. G. Mesa, E. Dobado-Fuentes, and J. J. Saenz: J. Appl. Phys. 79, 39 (1996).
48. H. W. Hao, A. M. Baro, and J. J. Saenz: J. Vac. Sci. Technol. B 9, 1323 (1991).
49. S. Belaidi, P. Girard, and G. Leveque: J. Appl. Phys. 81, 1023 (1997).
50. F. Saurenbach and B. D. Terris: Appl. Phys. Lett. 56, 1703 (1990).
51. J. W. Hong, K. H. Noh, S. I. Park, S. I. Kwun, and Z. G. Kim: Rev. Sci. Instrum. 70, 1735 (1999).
52. E. Z. Luo, Z. Xie, J. B. Xu, I. H. Wilson, and L. H. Zhao: Phys. Rev. B 61, 203 (2000).
53. V. M. Fridkin, Ferroelectric Semiconductors (Consultants Bureau, New York, 1980).
54. E. V. Chenskii: Fiz. Tverd. Tela (Leningrad) 12, 586 (1970).
55. X. Q. Chen, H. Yamada, T. Horiuchi, K. Matsushige, S. Watanabe, M. Kawai, and P. S. Weiss: J. Vac. Sci. Technol. B 17, 1930 (1999).
56. T. Tybell, C. H. Ahn, L. Antognazza, and J.-M. Triscone: Vide: Sci., Tech. Appl. 289, 551 (1998).
57. A. Efimov and S. R. Cohen: J. Vac. Sci. Technol. A 18, 1051 (2000).
58. Y. Cho, S. Kazuta, and K. Matsuura: Appl. Phys. Lett. 75, 2833 (1999).
59. S. V. Kalinin and D. A. Bonnell: Appl. Phys. Lett. 78, 1116 (2001).
60. S. V. Kalinin and D. A. Bonnell: J. Appl. Phys. 87, 3950 (2000).
61. S. V. Kalinin and D. A. Bonnell: Z. Metallkd. 90, 983 (1999).
62. S. V. Kalinin, C. Y. Johnson, and D. A. Bonnell, Phys. Rev. B (to be published).
63. Y. Liang, D. A. Bonnell, W. D. Goodhue, D. D. Rathman, and C. O. Bozler: Appl. Phys. Lett. 66, 1147 (1995).