Reliability physics of compound semiconductor transistors for microwave applications

Microelectronics Reliability

Volumn 41, Issue 1, 2001, Pages 21-30

  Borgarino, M ^a   Menozzi, R ^b   Dieci, D ^a   Cattani, L ^b   Fantini, F ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HOLE TRAPS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; IONIZATION OF SOLIDS; MICROWAVE INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTOR DOPING;

COMPOUND SEMICONDUCTOR TRANSISTORS;

TRANSISTORS;

EID: 0035154604     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00206-7     Document Type: Article

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