Effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 153-156

  Menozzi, R ^a   Borgarino, M ^a   Baeyens, Y ^a   van der Zanden, K ^a   Van Hove, M ^a   Fantini, F ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HOT CARRIERS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; TRANSCONDUCTANCE;

HOT ELECTRON DEGRADATION; LATTICE MATCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030709895     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)