Semi-analytical analysis for optimization of 0.1-μm InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 357-360

  Rohdin, Hans ^a   Su, Chung yi ^a   Moll, Nick ^a   Wakita, Arlene ^a   Nagy, Avelina ^a   Robbins, Virginia ^a   Kauffman, Mike ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; IONIZATION OF SOLIDS; MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

MESFET DEVICES;

EID: 0030705006     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)