Ti-gate metal induced PHEMT degradation in hydrogen

IEEE Electron Device Letters

Volumn 18, Issue 9, 1997, Pages 441-443

  Chao, P C ^a,b   Hu, W ^a   DeOrio, H ^a   Swanson, A W ^a   Hoffmann, W ^a   Taft, W ^a  

^a LOCKHEED MARTIN   (United States)

^b IEEE   (United States)

Author keywords

Hydrogen effect; PHEMT

Indexed keywords

CATALYSIS; COMPOSITION EFFECTS; DEGRADATION; GATES (TRANSISTOR); GOLD; HYDROGEN; PLATINUM; TITANIUM;

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031234648     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.622523     Document Type: Article

References (12)

1. S. Kayali, "Hydrogen effects on GaAs, status and progress," in Proc. GaAs Reliability Workshop, San Diego, CA, Oct. 1995, p. 32.
2. W. W. Hu, E. P. Parks, T. H. Yu, P. C. Chao, and A. W. Swanson, "Reliability of GaAs PHEMT under hydrogen containing atmosphere," in Proc. GaAs IC Symp., Philadelphia, PA, Oct. 1994, p. 247.
3. S. Adams, J. MacDonald, W. Hu, A. Immorlica, A. Reisinger, and F. Smith, "Reliability of GaAs PHEMT MMIC's in hydrogen ambients," in Proc. GaAs Reliability Workshop, Philadelphia, PA, Oct. 1994.
4. W. O. Camp, Jr., R. Lasater, V. Geneva, and R. Hume, "Hydrogen effects on reliability of GaAs MMIC's," in Proc. GaAs IC Symp., Oct. 1989, p. 203.
5. P. C. Chao, M. Y. Kao, K. Nordheden, and A. Swanson, "HEMT degradation in hydrogen gas," IEEE Electron. Device Lett., vol. 15, p. 151, May 1994.
6. M. J. Delaney, T. J. Wiltsey, M. W. Chiang, and K. K. Yu, "Reliability of 0.25 μm GaAs MESFET MMIC process: Reliability of accelerated life tests and hydrogen exposure," in Proc. GaAs Reliability Workshop, Philadelphia, PA, Oct. 1994.
7. K. Decker, "GaAs MMIC hydrogen degradation study," in Proc. GaAs Reliability Workshop, Philadelphia, PA, Oct. 1994.
8. W. J. Roesch, "Accelerated effects of hydrogen on GaAs MESFET's," in Proc. GaAs Reliability Workshop, Philadelphia, PA, Oct. 1994.
9. G. Kelley, M. Cobb, D. Weir, M. Welch, and M. Weig, "Effects of temperature and concentration on hydrogen degradation of pseudomorphic HEMT's," in Proc. GaAs Reliability Workshop, San Diego, CA, Oct. 1995, p. 35.
10. D. C. Eng, R. J. Culbertson, and K. P. Mac Williams, "The effect of hydrogen and deuterium incorporation on the electrical performance of a GaAs MESFET," in Proc. GaAs IC Symp., San Diego, CA, Oct. 1995, p. 140.
11. J. Chevallier, W. C. Dautremont-Smith, C. W. Tu, and S. J. Pearton, "Donor neutralization in GaAs(Si) by atomic hydrogen," Appl. Phys. Lett., vol. 47, p. 108, 1985.
12. J. Liu, C. Ortiz, Y. Zhang, H. Bakhru, and J. Corbett, "Effects of hydrogen on the barrier height of a titanium Schottky diode on p-type silicon," Phys. Rev. B, vol. 44, p. 8918, 1991.