Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 31-33

  Leoni, R E ^a   Hwang, J C M ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MESFET DEVICES; PASSIVATION; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; STABILITY;

DEGRADATION EFFECTS; GATE DRAIN BREAKDOWN; SILICON NITRIDE SURFACE PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030378194     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)