Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMTs submitted to accelerated life tests

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1227-1232

  Meneghesso, G ^a,b   Crosato, C ^a,b   Garat, F ^c   Martines, G ^d   Paccagnella, A ^a,b   Zanoni, E ^a,b  

^a UNIVERSITY OF PADOVA   (Italy)

^b IMFM Padova Consorzio Padova Ric   (Italy)

^c EUROPEAN SPACE AGENCY   (Netherlands)

^d UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRON TRANSITIONS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTERDIFFUSION (SOLIDS); METALLIZING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING; TITANIUM;

SCHOTTKY GATE CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0032083915     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00092-4     Document Type: Article

References (11)

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