Reliability testing of InP HEMT's using electrical stress methods

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1570-1576

  Van Zanden, Koen Der ^a   Schreurs, Dominique M M P ^b   Menozzi, Roberto ^c   Borgarino, Mattia ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; FIELD EFFECT TRANSISTORS; HOT CARRIERS; INTEGRATED CIRCUIT TESTING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; RELIABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTRICAL STRESS; HOT ELECTRON STRESS; MODFET; NONLINEAR NETWORK MEASUREMENT SYSTEM; RELIABILITY TESTING; TRANSMISSION LINE PULSE MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033169535     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777143     Document Type: Article

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