Investigation of the Burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 1999, Pages 260-265

  Rusani, A ^a   Kuchenbecker, J ^a   Borgarino, M ^a   Plana, R ^a   Graffeuil, J ^a   Vanzi, M ^a  

^a UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPUTER SIMULATION; COMPUTER SOFTWARE; CONTAMINATION; ELECTRIC CURRENTS; HYDROGEN; MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

BURN-IN EFFECT; CARBON ATOMS; GALLIUM INDIUM PHOSPHIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033324807     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)