Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1440-1448

  Gogineni, Usha ^b,c   Cressler, John D ^a,b   Niu, Guofu ^a,b   Harame, David L ^a,c  

^a IEEE   (United States)

^b AUBURN UNIVERSITY   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOT ELECTRONS; HOT HOLES; LOW FREQUENCY NOISE; REVERSE EMITTER BASE STRESS;

HOT CARRIERS; KINETIC THEORY; RELIABILITY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034228670     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848289     Document Type: Article

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