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Volumn 43, Issue 8, 1999, Pages 1325-1331

Relationship between gate lag, power drift, and power slump of pseudomorphic high electron mobility transistors

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); INTEGRATED CIRCUIT TESTING; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS;

GATE LAG; POWER DRIFT; POWER SLUMP; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033175298 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(99)00070-2 Document Type: Article

Times cited : (22)

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