Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current instability

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1643-1650

  Liou, J J ^a,b   Sheu, S H ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; THERMAL STRESS;

CURRENT INSTABILITY; ELECTRICAL STRESS; MEAN TIME TO FAILURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031251559     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00130-3     Document Type: Article

References (12)

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