Hydrogen-Related Burn-in in GaAs/AlGaAs HBTs and Implications for Reliability

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 203-206

  Henderson, T ^a   Ley, V ^a   Kim, T ^a   Moise, T ^a   Hill, D ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; CARBON; ELECTRIC CURRENTS; ELECTRONS; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING;

BIAS STRESS; BURN-IN; BURN-IN EFFECTS; CURRENT GAINS; ELECTRONS INJECTION; GAAS/ALGAAS; MEAN TIME TO FAILURE; RECOMBINATION CENTRES; STRESS TESTING;

HYDROGEN; HETEROJUNCTION BIPOLAR TRANSISTORS;

BIAS STRESS; BURN IN; CURRENT GAIN; ELECTRON INJECTION;

EID: 0030406679     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553568     Document Type: Conference Paper

References (7)

1. T. Henderson, "Model for Degradation of GaAs/AlGaAs HBTs Under Temperature and Current Stress," Proc. lEDM. pp. 811-184(1995)
2. T. Ishibashi, H. Sugahara, H. Ito, T. Nittono, K. Nagata, O. Nakajima, J. Nagano, K. Ogawa, "Current Gain Deterioration in Carbon-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors During High-Temperature Bias Stress Tests," Mat. Sci. and Eng. vol. B28, pp. 257-260(1994).
3. S. Bahl. L. Camnitz, D. Houng, M. Mierzwinski, J. Turner, and D. Lefforge. "Reliability Investigation of InGaP/GaAs Heteroj unction Bipolar Transistors," Proc. [EDM, pp. 815-818(1995).
4. C. R. Abernathy and F. Ren, "Effect of Base Dopant Species on Heteroj unction Bipolar Transistor Reliability," Mat. Sci. and Eng. vol. B28, pp. 232-237 (1994).
5. H. Fushimi and K. Wada, "The Presence of Isolated Hydrogen Donors in Heavily Carbon-Doped GaAs," J. Cryst. Growth, vol. 145. pp. 420-426 (1994).
6. T. Shinagawa and T. Okumura, "Hydrogend-Related Electron Traps in GaAs and their Relation to Crystal Stochiometry," Mat. Res. Soc. Symp. Proc. vol. 378, pp. 447-452 (1995).
7. W. Webster. "On the Variation of Junction-Transistor Current Amplification Factor with Emitter Current," Proc. IRE. vol. 42. pp. 914-920(1954).