High performance InGaP/GaAs HBTs with AlGaAs/InGaP emitter passivated ledges for reliable power applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 361-364

  Chen, W L ^a   Kim, T S ^a   Chau, H F ^a   Henderson, T ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; POWER AMPLIFIERS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

MEAN TIME TO FAILURE (MTTF); X BAND POWER PERFORMANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030653635     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)