Monte Carlo study of the dynamic breakdown effects in HEMT's

IEEE Electron Device Letters

Volumn 21, Issue 4, 2000, Pages 149-151

  Di Carlo, Aldo ^a   Rossi, Lorenzo ^a   Lugli, Paolo ^a   Zandler, Günther ^b   Meneghesso, Gaudenzio ^c,d   Jackson, Mike ^e   Zanoni, Enrico ^c,d  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c UNIVERSITY OF PADOVA   (Italy)

^d Unita CISM GNSM Padova   (Italy)

^e UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC FIELDS; HETEROJUNCTIONS; IMPACT IONIZATION; MONTE CARLO METHODS; POISSON DISTRIBUTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE; DYNAMIC BREAKDOWN EFFECTS; MULTIGRID TECHNIQUE; PARASITIC BIPOLAR EFFECT; POISSON MONTE CARLO SIMULATOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033889865     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.830964     Document Type: Article

References (16)

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