Ga as power MMIC : A design methodology for reliability

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1651-1654

  Muraro, J L ^a   Coppel, F ^b   Gregoris, G ^b   Tizien, P G ^c   Roux, J L ^c   Graffeuil, J ^a   Plana, R ^a  

^a LAAS CNRS   (France)

^b THALES ALENIA SPACE   (France)

^c CNES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

MONOLITHIC MICROWAVE POWER AMPLIFIER; RELIABILITY TESTING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031249187     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00131-5     Document Type: Article

References (1)

1. J. C. M. Hwang : "Gradual Degradation under RF Overdrive of MESFETs and PHEMTs" GaAs IC Symposium 1995, pp. 81-84.