A short-term high-current-density reliability investigation of AlGaAs/GaAs heterojunction bipolar transistors

IEEE Electron Device Letters

Volumn 19, Issue 12, 1998, Pages 469-471

  Bovolon, Nicola ^a   Schultheis, R ^b   Muller J E ^b,c   Zwicknagl, P ^b   Zanoni, Enrico ^a,c  

^a UNIVERSITY OF PADOVA   (Italy)

^b SIEMENS AG   (Germany)

^c IEEE

Author keywords

GaAs compounds; Heterojunction bipolar transistor; Semiconductor device reliability

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; LOW TEMPERATURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMOANALYSIS;

BURN-IN EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032304268     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.735749     Document Type: Article

References (13)

1. J.-E. Müller, P. Baureis, O. Berger, T. Böttner, N. Bovolon, G. Packeiser, and P. Zwicknagl "A 2 W, 62% PAE, small chip size HBT MMIC for 3V PCN applications," in Proc. GaAs IC Symp., 1997, pp. 256-159.
2. T. Henderson, D. Hill, W. Liu, D. Costa, H.-F. Chau, T. S. Kim, and K. khatibzadeh, "Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors," IEEE IEDM, pp. 187-190, 1994.
3. F. Ren, C. R. Abernathy, S. N. G. Chu, J. R. Lothian, and S. J. Pearton. "The role of hydrogen in current-induced degradation of carbon-doped GaAV/AlGaAs heterojunction bipolar transistor," Solid-State Electron., vol. 38, no. 6, pp. 1137-1141, 1995.
4. S. R. Bahl, L. H. Camnitz, D. Houng, M. Mierzwinski, T. Tumer, and D. Lefforge, "Reliability investigation of InGap/GaAs heterojunction bipolar transistors," IEEE IEDM, pp. 815-818, 1995.
5. T. S. Henderson, "The heterojunction bipolar transistor: An electron device with optical device reliability," Microelectron. Reliab., vol 36, nos. 11/12, pp. 1879-1886, 1996.
6. T. Henderson, V. Leg, T. kim, T. Moise, and D. Hill, "Hydrogen-related burn-in in GaAS/AlGaAS HBT's and implication for reliability," IEEE IEDM, pp. 203-206, 1996.
7. W. B. Joyce, "Thermal resistance of heat sinks with temperature-dependent conductivity," Solid State Electronics, vol. 18, pp. 321-322, 1975.
8. N. Bovolon, P. Baureis, J.-E. Müller, P. Zwicknagl, R. Schultheis, and E. Zanoni, "A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistor," IEEE Trans. Electron Devices, vol. 45, pp. 1846, Aug. 1998.
9. G. Dollinger, A. Bergmaier, T. Faestermann, and C. M. Frey, "High resolution depth profile analysis by elastic recoil detection with heavy ions," Fresenius J. Anal. Chem., vol. 353, pp. 311-315, 1995.
10. rcs detector for elastic recoil detection with high sensitivity," Nucl. Instrum. Meth. Phys. Res., vol. B136-138, pp. 638-643, 1998.
11. H. Fushimi and K. Wada, "Degration mechanism in carbon-doped GaAs minority-carrier injection devices," in 34th Int. Rel. Phys. Proc., Dallas, TX, 1996, pp. 214-220.
12. J. Y. Chi and K. Lu, "Mechanism for the initial current gain increase in carbon-doped heterostructure bipolar tansistors," in Proc. 1997 GaAs REL. Workshop, Oct. 12, 1997, pp. 7-12.
13. N. M. Johnson, "Hydrogen in compound semiconductors, " in Mat. Res. Soc. Symp. Proc., vol. 262, pp. 369-381, 1992.