Electron injection effect on formation and decomposition of C-H complexes in C-doped GaAs base of H+-implanted InGaP/GaAs HBTs

Solid-State Electronics

Volumn 42, Issue 11, 1998, Pages 2057-2061

  Kawano, Akihiro ^a   Imanishi, Kenji ^a   Tomioka, Takeshi ^a   Iwai, Taisuke ^a   Ishii, Kazuaki ^a   Yamaguchi, Yasuhiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; CURRENT VOLTAGE CHARACTERISTICS; HYDROGEN; ION IMPLANTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRON INJECTION; HOLE CONCENTRATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032208076     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00169-5     Document Type: Article

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