Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 376-379

  Wakita, A S ^a   Rohdin, H ^a   Su, C Y ^a   Moll, N ^a   Nagy, A ^a   Robbins, V M ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ENERGY GAP; IONIZATION OF SOLIDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

DRAIN RESISTANCE DEGRADATION; MODULATION DOPED FIELD EFFECT TRANSISTOR (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0030681943     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)