Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 1009-1012

  Menozzi, R ^a   Borgarino, M ^a   Baeyeans, Y ^b   Van Hove, M ^b   Fantini, F ^a  

^a UNIVERSITY OF PARMA   (Italy)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

HOT-ELECTRON DEGRADATIONS; INALAS/INGAAS/INP; MICROWAVE PERFORMANCE;

EID: 0009070613     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. M. Tutt, G. I. Ng, D. Pavlidis, and J. Mansfield, "Reliability issues of InAsAs/InGaAs High-electron-mobility transistors " Proc. 3rd Int. Conf. on Indium Phosphide and Related Materials, Cardiff, UK, 1991, pp. 349-352.
2. K. C Hwang, P. Ho, P. C. Chao, and K. H. G. Duh, "A novel low-temperature passivation of InAlAs/InGaAs HEMT devices by MBE," Proc. 4th Int. Conf. on Indium Phosphide and Related Materials, Newport, UbA, 1992, pp. 60-62.
3. D. J. LaCombe, W. W. Hu, F. R. Bardsley, "Reliability of 0.1 um InP HEMTs," Proc. Int. Reliability Physics Symp., Atlanta, UbA, 1993, pp. 364-371.
4. P. C. Chao, M. Y. Kao, K. Nordheden, and A. W. Swanson "HEMT degradation in hydrogen gas," IEEE Electron Device Lett, vol. 15, no. 5, May 1995, pp. 151-153.
5. H. Sasaki, K. Yajima, N. Yoshida, O. Ishihara, and S. Mitsui "Reliability of AlInAs/InGaAsVlnP HEMT with WSi ohmic contacts," Proc. 7th Int. Conf. on Indium Phosphide and Related Materials, Sapporo, Japan, 1995, pp. 745-748.
6. Y. Ashizawa, C. Nozaki, T. Noda, A. Sasaki, and S. Fujita, "Surface re-lated degradation of InP-based HEMTs during thermal stress, Sohd-State Electronics, vol. 38, no. 9, Sep. 1995, pp. 1627-1630
7. K. Weigel, M. Warth, K. Hirche, and K. Heine, "Degradation effects and stabilization of InAlAs/InGaAs-HFETs," Proc. 8th Int Conf. on Indium Phosphide and Related Materials, Schwäbisch Gmünd, Germany, 1996, pp. 662-665.
8. Y. Baeyens, T. Skrabka, M. Van Hove, W. De Raedt, B. Nauwelaers, and M Van Rossum, "Performance of 0.2 μm planar doped pseudomorphic and lattice matched HEMTs on GaAs and InP," Proc. of the 23dr European Solid State Device Research Conf. (ESSDERC93), Grenoble, France, 1993, pp. 753-756.
9. M. Van Hove, T. Skrabka, H. Bender, W. De Raedt, M. Van Rossum, and Y. Baeyens, "Optimization of ohmic contacts on lattice-matched and pseudomorphic AlInAs/InGaAs/InP," Mat. Res. Soc. Symp. Proc. vol. 326, 1994, pp. 463-468.