On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's

IEEE Microwave and Guided Wave Letters

Volumn 7, Issue 1, 1997, Pages 3-5

  Menozzi, Roberto ^a,b   Borgarino, Mattia ^a,b   Baeyens, Yves ^a,c   Van Hove, Marleen ^d   Fantini, Fausto ^a,b  

^a IEEE   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HOT CARRIERS; MULTILAYERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS; THERMAL STRESS;

HOT ELECTRON STRESSING; SURFACE DEGRADATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030823583     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.553702     Document Type: Article

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