Breakdown walkout in pseudomorphic HEMT's

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 543-546

  Menozzi, Roberte ^a   Cova, Paolo ^a   Canali, Claudio ^a   Fantini, Fausto ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRONS; GATES (TRANSISTOR); HOT CARRIERS; IONIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRESSES;

ALUMINUM GALLIUM ARSENIDE; GATE DRAIN BREAKDOWN WALKOUT; HOT ELECTRON STRESS CYCLES; HOT ELECTRONS; INDIUM GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030126223     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485535     Document Type: Article

References (11)

1. L. D. Nguyen, L. E. Larson, and U. K. Mishra, "Ultra-high-speed modulation-doped field-effect transistors: A tutorial review," Proc. IEEE, vol. 80, no. 4, pp. 494-518, 1992.
2. M. Aust, H. Wang, M. Biedenbender, R. Lai, D. C. Streit, P. H. Liu, G. S. Dow, and B. R. Allsn, "A 94-GHz monolithic balanced power amplifier using O.l-m gate GaAs-based HEMT MMIC production process technology," IEEE Microwave. Guided Wave. Lett., vol. 5, no. 1, pp. 12-14, 1995.
3. Y. Itoh, Y. Horiie, K. Nakahara, N. Yoshida, T. Katoh, and T. Takagi, "A V-band, high gain, low noise, monolithic PIjDEMT amplifier mounted on a small hermetically sealed package," IEEE Microwave Guided Wave Lett., vol. 5, no. 2, pp. 48-49, 1995.
4. C. Teclesco, E. Zanoni, C. Canali, S. Bigliardi, M. Manfredi, D. C. Streit, and W. T. Anderson, "Impact ionization and light emission in highpower pseudomorphic AlGaAs/InGaAs HEMT'S," IEEE Trans. Electron Devices, vol. 40, no. 7, pp. 1211-1214, 1993.
5. K. Hui, C. Hu, P. George, and P. K. Ko, "Impact ionization in GaAs MESFET's," IEEE Electron Device Leu., vol. 11, no. 3, pp. 113-115, 1990.
6. P. C. Chao, M. Shur, M. Y. Kao, and B. R. Lee, "Breakdown walkout in AlGaAs/GaAs HEMT's," IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 738-740, 1992.
7. F.-C. Hsu and K.-Y. Chiu, "Temperature dependence of hot-electron induced degradation in MOSFET's," IEEE Electron Device Lett., Vol. EDL5, no. 5, pp. 148-150, 1984.
8. J. J. Tzou, C. C. Yao, R. Cheung, and H. Chan, "Hot-electron-induced MOSFET degradation at low temperatures," IEEE Electron Device Lett., Vol. EDL6, no. 9, pp. 450-452, 1985.
9. P. H. Ladbrooke and S. R. Blight, "Low-field low-frequency dispersion of Iransconductance in GaAs MESFET's with implication for other raledependent anomalies," IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 257-267, 1988.
10. C. Canali, F. Magistrali, M. Sangalli, C. Tedesco, E. Zanoni, G. Castellaneta, F. Marchetti, "Reliability aspects of commercial AlGaAs/GaAs HEMT's," in Proc. 1991 IEEE Int. Reliability Physics, 19, pp. 206-213.
11. C. Canali. P. Cova, E. De Bortoli, F. Fantini, G. Meneghesso, R. Menozzi, and E. Zanoni, "Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMT's induced by hot-electrons," in Proc. 1995 IEEE Int. Reliability Physics, 19. pp. 205-211.