Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's

IEEE Electron Device Letters

Volumn 17, Issue 2, 1996, Pages 62-64

  Chor, E F ^a,b,c   Malik, R J ^a,b   Hamm, R A ^b   Ryan, R ^b  

^a IEEE

^b LUCENT TECHNOLOGIES   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FAILURE (MECHANICAL); LEAKAGE CURRENTS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

COLLECTOR LEAKAGE SHORT; METALLURGICAL STABILITY; TURN ON VOLTAGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030085103     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.484124     Document Type: Article

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