Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors

Journal of Physics D: Applied Physics

Volumn 31, Issue 21, 1998, Pages 3004-3008

  Borgarino, Mattia ^a   Salviati, Giancarlo ^b   Cattani, Laura ^a   Lazzarini, Laura ^b   Fregonara, Carlo Zanotti ^b   Fantini, Fausto ^a   Carnera, Alberto ^c  

^a UNIVERSITY OF PARMA   (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CATHODOLUMINESCENCE; EMISSION SPECTROSCOPY; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; STRESSES;

CATHODOLUMINESCENCE SPECTROSCOPY; STRESS INDUCED OUTDIFFUSION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032494621     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/21/004     Document Type: Article

References (9)

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