On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's

IEEE Electron Device Letters

Volumn 20, Issue 4, 1999, Pages 152-154

  Menozzi, R ^a   Borgarino, M ^a   Van Der Zanden, K ^b   Schreurs, D ^c  

^a UNIVERSITY OF PARMA   (Italy)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); HOT CARRIERS; IMPACT IONIZATION; MICROWAVE INTEGRATED CIRCUITS; MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE;

HOT ELECTRON (HE) RELIABILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032667829     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.753750     Document Type: Article

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