Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 366-372

  Borgarino, Mattia ^a   Menozzi, Roberto ^a   Baeyens, Yves ^b   Cova, Paolo ^b   Fantini, Fausto ^b  

^a UNIVERSITY OF PARMA   (Italy)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Fet's; High speed circuits devices; Microwave devices; Microwave fet's; Millimeter wave devices; Millimeterwave fet's; Modfet's; Reliability

Indexed keywords

ELECTRIC CURRENTS; ELECTRONS; HOT CARRIERS; MILLIMETER WAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING;

HOT ELECTRON DEGRADATION (HED); PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031996556     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658668     Document Type: Article

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