0.15 μm passivated InP-based HEMT's MMIC technology with high thermal stability in hydrogen ambient

IEEE Electron Device Letters

Volumn 21, Issue 3, 2000, Pages 97-99

  Chertouk, M ^a   Dammann, M ^a   Kohler K ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; HYDROGEN; METALLIZING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NITROGEN; RELIABILITY; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL STRESS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TITANIUM COMPOUNDS;

FORMING GAS; GATE METALLIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033872335     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.823568     Document Type: Article

References (11)

1. P. M. Smith, "InP-based HEMTs for microwave and millimeter-wave applications," in Proc. Indium Phosphide and Related Materials Conf., Sapporo, Japan, 1995, pp. 68-71.
2. P. M. Smith et al., "Application of GaAs and InP-based HEMT technology to MILSATCOM systems," in IEEE MILCOM Conf. Dig., 1995, pp. 731-736.
3. K. H. Hwang et al., "A reliable ECR passivation technique on the 0.1 μm InAlAs/InGaAs HEMT device," in Proc. Indium Phosphide and Related Materials Conf., Santa Barbara, CA, 1994, pp. 624-627.
4. S. Kayali and D. Dragle, "Compound Semiconductor Reliability: Hydrogen Effects on GaAs Microwave Semiconductors,", Final Rep. D-14765, June 18, 1997. NASA RTOP No. 323-79-2N.
5. P. C. Chao, M. Y. Kao, K. Nordheden, and A. W. Swanson, "HEMT degradation in hydrogen gas," IEEE Electron Device Lett., vol. 15, pp. 151-153, 1994.
6. Y. Saito et al., "Hydrogen degradation cf GaAs MMICs and Hydrogen evolution in the Hermetic package," in Microwave and Millimeter Wave Monolithic Circuits Symp. Dig., 1995.
7. max: HF performance, thermal stability and reliability," in Proc. Int. Symp. Compound Semiconductors, ISCS '98, Nara, Japan, pp. 185-192.
8. _, "Optimized gate-drain capacitance of W-band high gain passivated 0.15 μm InAlAs/InGaAs HEMTs," Electron. Lett., vol. 34, pp. 1703-1705, 1998.
9. M. Dammann et al., "Effect of atmosphere on reliability of passivated 0.15 μm InAlAs/InGaAs HEMTs," Electron. Lett., vol. 34, pp. 2064-2066, 1998.
10. M. Chertouk et al., "Manufacturable 0.15 μm InP-based HEMT MMIC process with high yield and reliability on 2″ InP substrate," in 1999 GaAs MANTECH, Vancouver, B.C., Canada, 1999, pp. 25-28.
11. P. C. Chao, Private communication..