Off-state breakdown walkout in high-power PHEMT's

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 42-45

  Chou, Y C ^a   Li, G P ^a   Yu, K K ^a   Wu, C S ^a   Chu, Peter ^a   Hou, L D ^a   Midford, T A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; INTEGRATED CIRCUIT MANUFACTURE; OPTIMIZATION; POWER ELECTRONICS; RELIABILITY;

EPITAXIAL WAFERS; OFF STATE BREAKDOWN WALKOUT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030405781     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)