-
1
-
-
0030705006
-
Semi-analytical analysis for optimization of 0.1 μm InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability
-
IPRM, Hyannis, Cape Code, Massachusetts, May 11-15
-
Rohdin H, Moll N, Wakita A, Nagy A, Robbins VM, Kauffman M. Semi-analytical analysis for optimization of 0.1 μm InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability. In: Proc. of International Symposium on Indium Phosphide and Related Material, IPRM, Hyannis, Cape Code, Massachusetts, May 11-15. 1997. p. 357-60.
-
(1997)
Proc. of International Symposium on Indium Phosphide and Related Material
, pp. 357-360
-
-
Rohdin, H.1
Moll, N.2
Wakita, A.3
Nagy, A.4
Robbins, V.M.5
Kauffman, M.6
-
2
-
-
0029288955
-
1 - XAs high electron mobility transistors on InP. Part II: On-state
-
1 - xAs high electron mobility transistors on InP. Part II: On-state. Journal of Applied Physics 1995;34(4):1805-8.
-
(1995)
Journal of Applied Physics
, vol.34
, Issue.4
, pp. 1805-1808
-
-
Dickmann, J.1
Shildberg, S.2
Riepe, K.3
Maile, B.E.4
Shurr, A.5
Geyer, A.6
Narozny, P.7
-
3
-
-
0025403710
-
Impact ionization in GaAs MESFETs
-
Hui K, Hu C, George P, Ko P. Impact ionization in GaAs MESFETs. IEEE Electron Device Letters 1990;11(3):113-5.
-
(1990)
IEEE Electron Device Letters
, vol.11
, Issue.3
, pp. 113-115
-
-
Hui, K.1
Hu, C.2
George, P.3
Ko, P.4
-
4
-
-
0347981771
-
On-state breakdown in power HEMTs: Measurements and modelling
-
IEDM, Washingthon, December 7-10
-
Somerville MH, Blanchard R, Del Alamo JA, Duh G, Chao PC. On-state breakdown in power HEMTs: measurements and modelling. In: Tech. Dig. of IEEE Int. Electron Device Meeting, IEDM, Washingthon, December 7-10. 1997. p. 553-6.
-
(1997)
Tech. Dig. of IEEE Int. Electron Device Meeting
, pp. 553-556
-
-
Somerville, M.H.1
Blanchard, R.2
Del Alamo, J.A.3
Duh, G.4
Chao, P.C.5
-
5
-
-
0032204065
-
A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs
-
Somerville MH, Blanchard R, Del Alamo J, Duh G, Chao P. A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs. IEEE Electron Device Letters 1998;19(11):405-7.
-
(1998)
IEEE Electron Device Letters
, vol.19
, Issue.11
, pp. 405-407
-
-
Somerville, M.H.1
Blanchard, R.2
Del Alamo, J.3
Duh, G.4
Chao, P.5
-
6
-
-
0032713390
-
On-state and off-state breakdown in GaInAs/InP composite-channel HEMTs with variable GaInAs channel thickness
-
Meneghesso G, Neviani A, Oesterholt R, Matloubian M, Liu T, Brown J, Canali C, Zanoni E. On-state and off-state breakdown in GaInAs/InP composite-channel HEMTs with variable GaInAs channel thickness. IEEE Transaction on Electron Devices 1999;46(1):2-9.
-
(1999)
IEEE Transaction on Electron Devices
, vol.46
, Issue.1
, pp. 2-9
-
-
Meneghesso, G.1
Neviani, A.2
Oesterholt, R.3
Matloubian, M.4
Liu, T.5
Brown, J.6
Canali, C.7
Zanoni, E.8
-
7
-
-
0029403829
-
Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates
-
Shigekawa N, Enoki T, Furuta T, Ito H. Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates. IEEE Electron Device Letters 1995;16(11):515-7.
-
(1995)
IEEE Electron Device Letters
, vol.16
, Issue.11
, pp. 515-517
-
-
Shigekawa, N.1
Enoki, T.2
Furuta, T.3
Ito, H.4
-
8
-
-
0033164587
-
Electroluminescence analysis of HFETs breakdown
-
Gaddi R, Meneghesso G, Pavesi M, Peroni M, Canali C, Zanoni E. Electroluminescence analysis of HFETs breakdown. IEEE Electron Device Letters 1999;20(7):372-4.
-
(1999)
IEEE Electron Device Letters
, vol.20
, Issue.7
, pp. 372-374
-
-
Gaddi, R.1
Meneghesso, G.2
Pavesi, M.3
Peroni, M.4
Canali, C.5
Zanoni, E.6
-
9
-
-
0031169958
-
Investigation and modelling of impact ionization with regard to the rf and noise behaviour of HFET
-
Reuter R, Agethen M, Auer U, Van Waasen S, Peters D, Brockerhoff W, Tegude FJ. Investigation and modelling of impact ionization with regard to the rf and noise behaviour of HFET. IEEE Transaction on Microwave Theory and Techniques 1997;45(6):977-83.
-
(1997)
IEEE Transaction on Microwave Theory and Techniques
, vol.45
, Issue.6
, pp. 977-983
-
-
Reuter, R.1
Agethen, M.2
Auer, U.3
Van Waasen, S.4
Peters, D.5
Brockerhoff, W.6
Tegude, F.J.7
-
10
-
-
0030565403
-
Evidence of interface trap creation by hot electrons in AlGaAs/GaAs HEMTs
-
Meneghesso G, Paccagnella A, Haddab Y, Canali C, Zanoni E. Evidence of interface trap creation by hot electrons in AlGaAs/GaAs HEMTs. Applied Physics Letters 1996;69(10):1411-3.
-
(1996)
Applied Physics Letters
, vol.69
, Issue.10
, pp. 1411-1413
-
-
Meneghesso, G.1
Paccagnella, A.2
Haddab, Y.3
Canali, C.4
Zanoni, E.5
-
11
-
-
0037790527
-
Hot carriers effects in AlGaAs/ InGaAs high electron mobility transistors: Failure mechanisms induced by hot-carrier testing
-
Meneghesso G, Mion A, Haddab Y, Pavesi M, Manfredi M, Canali C, Zanoni E. Hot carriers effects in AlGaAs/ InGaAs high electron mobility transistors: failure mechanisms induced by hot-carrier testing. Journal of Applied Physics 1997;82(11):5547-54.
-
(1997)
Journal of Applied Physics
, vol.82
, Issue.11
, pp. 5547-5554
-
-
Meneghesso, G.1
Mion, A.2
Haddab, Y.3
Pavesi, M.4
Manfredi, M.5
Canali, C.6
Zanoni, E.7
-
12
-
-
0030126223
-
Breakdown walkout in pseudomorphic HEMTs
-
Menozzi R, Cova P, Canali C, Fantini F. Breakdown walkout in pseudomorphic HEMTs. IEEE Transactions on Electron Device 1996;43(4):543-6.
-
(1996)
IEEE Transactions on Electron Device
, vol.43
, Issue.4
, pp. 543-546
-
-
Menozzi, R.1
Cova, P.2
Canali, C.3
Fantini, F.4
-
14
-
-
0027558843
-
Dependance of ionization current on gate bias in GaAs MESFETs
-
Canali C, Neviani A, Tedesco C, Zanoni E, Cetronio A, Lanzieri C. Dependance of ionization current on gate bias in GaAs MESFETs. IEEE Transactions on Electron Device 1993;40(3):498-501.
-
(1993)
IEEE Transactions on Electron Device
, vol.40
, Issue.3
, pp. 498-501
-
-
Canali, C.1
Neviani, A.2
Tedesco, C.3
Zanoni, E.4
Cetronio, A.5
Lanzieri, C.6
-
15
-
-
0026908578
-
Impact ionization and light emission in AlGaAs/GaAs HEMTs
-
Zanoni E, Manfredi M, Bigliardi S, Paccagnella A, Pisoni P, Tedesco C, Canali C. Impact ionization and light emission in AlGaAs/GaAs HEMTs. IEEE Transactions on Electron devices 1992;39(8):1849-57.
-
(1992)
IEEE Transactions on Electron Devices
, vol.39
, Issue.8
, pp. 1849-1857
-
-
Zanoni, E.1
Manfredi, M.2
Bigliardi, S.3
Paccagnella, A.4
Pisoni, P.5
Tedesco, C.6
Canali, C.7
-
16
-
-
0029204334
-
Offstate breakdown in InAlAs/InGaAs MODFETs
-
Bahl SR, Del Alamo JA, Dickmann J, Schildberg S. Offstate breakdown in InAlAs/InGaAs MODFETs. IEEE Transactions on Electron Devices 1995;42(1):15-22.
-
(1995)
IEEE Transactions on Electron Devices
, vol.42
, Issue.1
, pp. 15-22
-
-
Bahl, S.R.1
Del Alamo, J.A.2
Dickmann, J.3
Schildberg, S.4
|