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Volumn 39, Issue 12, 1999, Pages 1759-1763

DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs

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EID: 0038506819     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00182-1     Document Type: Article
Times cited : (15)

References (18)
  • 1
    • 0030705006 scopus 로고    scopus 로고
    • Semi-analytical analysis for optimization of 0.1 μm InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability
    • IPRM, Hyannis, Cape Code, Massachusetts, May 11-15
    • Rohdin H, Moll N, Wakita A, Nagy A, Robbins VM, Kauffman M. Semi-analytical analysis for optimization of 0.1 μm InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability. In: Proc. of International Symposium on Indium Phosphide and Related Material, IPRM, Hyannis, Cape Code, Massachusetts, May 11-15. 1997. p. 357-60.
    • (1997) Proc. of International Symposium on Indium Phosphide and Related Material , pp. 357-360
    • Rohdin, H.1    Moll, N.2    Wakita, A.3    Nagy, A.4    Robbins, V.M.5    Kauffman, M.6
  • 5
    • 0032204065 scopus 로고    scopus 로고
    • A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs
    • Somerville MH, Blanchard R, Del Alamo J, Duh G, Chao P. A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs. IEEE Electron Device Letters 1998;19(11):405-7.
    • (1998) IEEE Electron Device Letters , vol.19 , Issue.11 , pp. 405-407
    • Somerville, M.H.1    Blanchard, R.2    Del Alamo, J.3    Duh, G.4    Chao, P.5
  • 7
    • 0029403829 scopus 로고
    • Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates
    • Shigekawa N, Enoki T, Furuta T, Ito H. Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates. IEEE Electron Device Letters 1995;16(11):515-7.
    • (1995) IEEE Electron Device Letters , vol.16 , Issue.11 , pp. 515-517
    • Shigekawa, N.1    Enoki, T.2    Furuta, T.3    Ito, H.4
  • 11
    • 0037790527 scopus 로고    scopus 로고
    • Hot carriers effects in AlGaAs/ InGaAs high electron mobility transistors: Failure mechanisms induced by hot-carrier testing
    • Meneghesso G, Mion A, Haddab Y, Pavesi M, Manfredi M, Canali C, Zanoni E. Hot carriers effects in AlGaAs/ InGaAs high electron mobility transistors: failure mechanisms induced by hot-carrier testing. Journal of Applied Physics 1997;82(11):5547-54.
    • (1997) Journal of Applied Physics , vol.82 , Issue.11 , pp. 5547-5554
    • Meneghesso, G.1    Mion, A.2    Haddab, Y.3    Pavesi, M.4    Manfredi, M.5    Canali, C.6    Zanoni, E.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.