Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET's designed for microwave power applications

IEEE Transactions on Electron Devices

Volumn 45, Issue 11, 1998, Pages 2261-2267

  Menozzi, Roberto ^b   Pavesi, Maura ^b,c   Manfredi, Manfredo ^b,c   Ghezzi, Carlo ^b,c   Lanzieri, Claudio ^d   Peroni, Marco ^d   Canali, Claudio ^a,c,e  

^a IEEE

^b UNIVERSITY OF PARMA   (Italy)

^c INFM   (Italy)

^d ALENIA SPAZIO   (Italy)

^e UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Aluminum materials device; Gallium materials devices; Microwave FET's; Power FET's

Indexed keywords

ELECTROLUMINESCENCE; ENERGY GAP; HETEROJUNCTIONS; HOT CARRIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

HOT ELECTRON STRESSES;

FIELD EFFECT TRANSISTORS;

EID: 0032204662     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726636     Document Type: Article

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