Mechanism for recoverable power drift in PHEMT's

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 498-506

  Leoni, Robert E ^a   Bao, Jianwen ^b   Bu, Jiankang ^c   Du, Xiaohang ^c   Shirokov, Mikhail S ^c   Hwang, James C M ^c  

^a RAYTHEON COMPANY   (United States)

^b Anadigics Inc   (United States)

^c LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC LOSSES; HOT CARRIERS; MICROWAVE AMPLIFIERS; POWER AMPLIFIERS;

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT); RECOVERABLE POWER DRIFT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033890733     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824715     Document Type: Article

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