Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimetre-wave applications

Semiconductor Science and Technology

Volumn 13, Issue 10, 1998, Pages 1053-1063

  Menozzi, Roberto ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; MICROWAVE DEVICES; MILLIMETER WAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTRON HEATING; GATE-DRAIN BREAKDOWN; HOT ELECTRON EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032182013     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/10/001     Document Type: Review

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