Breakdown in Millimeter-Wave Power InP HEMT's: A Comparison with GaAs PHEMT's

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 9, 1999, Pages 1204-1211

  Del Alamo, J A ^a,c,d,e   Somerville, M H ^a,b,f  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b VASSAR COLLEGE   (United States)

^c STANFORD UNIVERSITY   (United States)

^d NTT CORPORATION   (Japan)

^e USA   (United States)

^f UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Breakdown voltage; High electron mobility transistor (HEMT); InGaAs; Power; Pseudomorphic HEMT (PHEMT)

Indexed keywords

EID: 0000946836     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.782077     Document Type: Article

References (39)

1. Y. C. Chen, D. L. Ingram, R. Lai, M. Barsky, R. Grunbacher, T. Block, H. C. Yen, and D. C. Streit, "A 95-GHz InP HEMT MMIC amplifier with 427-mW power output," IEEE Microwave Guided Wave Lett., vol. 8, no. 11, pp. 399-401, 1998.
2. H. Wang, Y. Hwang, T. H. Chen, M. Biedenbender, D. C Streit, D. C. W. Lo, G. S. Dow, and B. R. Allen, "A W-band monolithic 175-mW power amplifier," in Proc. IEEE Microwave Theory Technology Symp., 1995, pp. 419-422.
3. P.-P. Huang, T.-W. Huang, H. Wang, E. W. Lin, Y. Shu, G. S. Dow, R. Lai, M. Biedenbender, and J. H. Elliott, "A 94-GHz 0.35-W power amplifier module," IEEE Trans. Microwave Theory Technol., vol. 45, no. 12, pp. 2418-2423, 1997.
4. M. Yu, M. Matloubian, P. Petre, L. Hamilton, R. Bowen, M. Liu, H. C. Sun, C. Ngo, and P. Janke, "W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW design," in Proc. IEEE GaAs Int. Circuit Symp., 1998, pp. 31-40.
5. S. Piotrowicz, C. Gaquiere, B. Bonte, E. Bourcier, D. Theron, X. Wallart, and Y. Crosnier, "Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure," IEEE Microwave Guided Wave Lett., vol. 8, no. 1, pp. 10-12, 1998.
6. max," IEEE Microwave Guided Wave Lett., vol. 5, no. 7, pp. 230-232, 1995.
7. O. S. A. Tang, K. H. G. Duh, S. M. J. Liu, P. M. Smith, W. F. Kopp, T. J. Rogers, and D. J. Pritchard, "A 560 mW, 21% power-added efficiency V-band MMIC power amplifier," in Proc. IEEE GaAs Int. Circuit Symp., 1996, pp. 115-118.
8. P. Greiling and N. Ho, "Commercial satellite applications for heterojunction microelectronics technology," IEEE Trans. Microwave. Theory Technol., vol. 46, no. 6, pp. 734-736, 1998.
9. J. Dickmann and M. Berg, "InP-based devices and integrated circuits for millimeter-wave sensor and communication systems," in Proc. Int. Conf. InP and Related Materials, 1998, pp. 411-414.
10. K.-F. Lau, L. Liu, and S. Dow, "Recent MMW technology development and its military and commercial applications," in Proc. IEEE Radio Frequency Int. Circuits Symp., 1998, pp. 87-90.
11. S. Bahl and J. A. del Alamo, "A new drain-current injection technique for the measurement of off-state breakdown voltage in FET's," IEEE Trans. Electron Devices, vol. 40, no. 8, pp. 1558-1560. 1993.
12. M. H. Somerville, R. Blanchard, J. A. del Alamo, G. Duh, and P. C. Chao, "On-state breakdown in power HEMTs: Measurements and modeling," in Proc. Int. Electron Devices Meeting, 1997, pp. 553-556.
13. M. H. Somerville R. Blanchard, J. A. del Alamo, G. Duh, and P. C. Chao, "A new gate current extraction technique for measurement of on-state breakdown voltage in HEMT's," IEEE Electron Device Lett., vol. 19, no. 11, pp. 405-407, 1998.
14. S. R. Bahl, J. A. del Alamo, J. Dickmann, and S. Schildberg, "Off-state breakdown in InAlAs/InGaAs MODFET's," IEEE Trans. Electron Devices, vol. 42, no. 1, pp. 15-22, 1995.
15. 1-x As high electron mobility transistors on InP. I: Off-state," Jpn. J. Appl. Phys., vol. 34, pt. 1, no. 1, pp. 66-71, 1995.
16. K. W. Eisenbeiser, J. R. East, and G. I. Haddad, "Theoretical analysis of the breakdown voltage in pseudomorphic HFET's," IEEE Trans. Electron Devices, vol. 43, no. 11, pp. 1778-1787, 1996.
17. G. Meneghesso, A. Mion, A. Neviani, M. Matloubian, J. Brown, M. Hafizi, T. Liu, C. Canali, M. Pavesi, M. Manfredi, and E. Zanoni, "Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMT's," in Proc. Int. Electron Devices Meeting, 1996, pp. 43-46.
18. M. H. Somerville and J. A. del Alamo, "A model for tunneling-limited breakdown in high-power HEMT's," Proc. Int. Electron Devices Meeting, 1996, pp. 35-38.
19. H. Rohdin, C.-Y. Su, N. Moll, A. Wakita, A. Nagy, V. Robbins, and M. Kauffman, "Semi-analytical analysis for optimizalion of 0.1 μm InGaAs-channel MODFET's with emphasis on on-state breakdown and reliability," in Proc. Int. Conf. InP and Related Materials, 1997, pp. 357-360.
20. 0.47As/InP HBT's," IEEE Electron Device Lett., vol. 18, no. 12, pp. 619-621, 1997.
21. C. S. Putnam, M. H. Somerville, J. A. del Alamo, P. C. Chao, and K. G. Duh, "Temperature dependence of breakdown voltage in InAlAs/InGaAs HEMTs: Theory and experiments," in Proc. Int. Conf. InP and Related Materials, 1997, pp. 197-200.
22. M. H. Somerville, "Limiting physics of millimeter-wave InP power high-electron mobility transistors," Ph.D. dissertation, Massachusetts Institute of Technology, Cambridge, 1998.
23. M. H. Somerville, J. A. del Alamo, and P. Saunier, "Off-state breakdown in power PHEMTs: The impact of the source," IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 1883-1889, 1998.
24. W. Monch, "Schottky contacts on ternary compound semiconductors: Compositional variations of barrier height," Appl. Phys. Lett., vol. 67, no. 15, pp. 2209-2211, 1995.
25. 1-xAs heterostructure field-effect transistor with an in-enriched channel," in Proc. Int. Conf. InP and Related Materials, 1990, pp. 100-103.
26. 0.80As high electron mobility transistors," IEEE Electron Device Lett., vol. 13, no. 3, pp. 143-145, 1992.
27. H. Rohdin and L. Studebaker (HP), private communication, 1998.
28. 0.47As heterostructure field-effect transistors," IEEE Trans. Electron Devices, vol. 38, no. 9, pp. 1986-1992, 1991.
29. 0.65 Schottky layers grown by MOVPE," in Proc. IEEE Dev. Research Conf., 1998, pp. 32-33.
30. M. Amano, S. Fujita, S. Hosoi, T. Noda, A. Sasaki, and Y. Ashizawa, "InAlAs/InGaAs HEMT using InGaP Schottky contact layer," in Proc. Int. Conf. InP and Related Materials, 1995, pp. 416-419.
31. K. Vaccaro, S. M. Spaziani, A. Davis, H. M. Dauplaise, E. A. Martin, and J. P. Lorenzo, "Cadmium sulfide surface stabilization and Schottky barrier enhancement for InP based optoelectronic devices," in Proc. Int. Conf. InP and Related Materials, 1995, pp. 817-820.
32. H. Hasegawa, "Controlled formation of high Schottky barriers on InP and related materials," in Proc. Int. Conf. InP and Related Materials, 1998, pp. 451-454.
33. S. Habibi, M. Totsuka, J. Tanaka, and S. Matsumoto, "Improvement in Schottky diode characteristics of metal-InAlAs contact using an in situ photochemical etching and surface passivation process," in Proc. Int. Conf. on InP and Rel. Mat., 1995, pp. 821-824.
34. P. Chevalier, X. Wallart, F. Mollot, B. Bonte, and R. Fauquembergue, "Composite channel HEMT's for millimeter-wave power applications," in Proc. Int. Conf. InP and Related Materials, 1998, pp. 207-210.
35. G. Meneghesso, A. Neviani, R. Oesterholt, M. Matloubian, T. Liu, J. J. Brown, C. Canali, and E. Zanoni, "On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness," IEEE Trans. Electron Devices vol. 46, no. 1, pp. 2-9, 1999.
36. max," IEEE Electron Device Lett., vol. 15, no. 11, pp. 477-479, 1994.
37. D. G. Ballegeer, I. Adesida, C. Caneau, and R. Baht, "Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process," in Proc. Int. Conf. InP and Related Materials, 1994, pp. 331-334.
38. K. Y. Hur, R. A. McTaggart, B. W. LeBlanc, W. E. Hoke, P. J. Lemonias, A. B. Miller, T. E. Kazior, and L. M. Aucoin, "Double recessed AlInAs/GaInAs/InP HEMT's with high breakdown voltages," in Proc. GaAs IC Symp., 1995, pp. 101-104.
39. T. Suemitsu, T. Enoki, and Y. Ishii, "Body contacts in InP-based InAlAs/InGaAs HEMT's and their effects on breakdown voltage and kink suppression," Electron Lett., vol. 31, no. 9, pp. 758-759, 1995.