Light emission studies of total dose and hot carrier effects on silicon junctions

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1804-1808

  Kerns, S ^a   Jiang, D ^a   De La Bardonnie, M ^a   Pelanchon, F ^a   Barnaby, H ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; ELECTRIC PROPERTIES; HETEROJUNCTIONS; HOT CARRIERS; HYDROGEN; IRRADIATION; LIGHT EMISSION; OPTICAL PROPERTIES; PASSIVATION; SEMICONDUCTING BORON; SPECTROPHOTOMETERS;

BORON PASSIVATION; HOT CARRIER STRESS; SILICON JUNCTIONS;

SEMICONDUCTING SILICON;

EID: 0033314599     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819157     Document Type: Article

References (10)

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