A mechanism for hydrogen-related transient effects in carbon-doped AlGaAs/GaAs heterostructure bipolar transistors

IEEE Electron Device Letters

Volumn 19, Issue 11, 1998, Pages 408-410

  Chi, Jim Y ^a,b   Lu, Ke ^a,b  

^a IEEE   (United States)

^b M/A COM   (United States)

Author keywords

HBT; Hydrogen effect; Reliability

Indexed keywords

ANNEALING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE;

TRANSIENT PHENOMENON;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032203264     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.728895     Document Type: Article

References (5)

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4. S. Bahl, L. Camnitz, D. Houng, and M. Mierzwinski, "Reliability investigation of InGaP/GaAs heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 17, p. 446, 1996.
5. K. J. Laidler, Chemical Kinetics, 2nd ed. New York: McGraw-Hill, 1971.