On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors

Microelectronics Reliability

Volumn 39, Issue 12, 1999, Pages 1823-1832

  Borgarino, M ^a   Plana, R ^a   Delage, S ^b   Fantini, F ^c   Graffeuil, J ^a  

^a LAAS CNRS   (France)

^b Thales Research K Technology Domaine de Corbeville   (France)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342748248     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00191-2     Document Type: Article

References (39)

1. Asbeck PM. Bipolar transistors. In: Sze SM, editor. High-speed semiconductor devices. New York: Wiley, 1990. p. 372.
2. Di Forte-Poisson MA, Brylinski C, Pons D. Croissance LP-MOCVD de structures transistor bipolaire a heterojunction GaInP/GaAs. Revue Technique Thomson-CSF 1994;26:403-18.
3. Pearton SJ, Ren F, Hobson WS, Abernathy CR, Masaitis RL, Chakrabarti UK. Surface recombination velocities on processed InGaP p-n junctions. Appl Phys Lett 1993;63:3610-2.
4. Mooney PM. Deep donor levels (DX centers) in III-V semiconductors. J Appl Phys 1990;67:R1-R24.
5. Plana R, Graffeuil J, Delage SL, Blanck H, Di FortePoisson MA, Brylinski C, Chartier E. Low frequency noise in self-aligned GaInP/GaAs heterojunction bipolar transistor. Electronics Letters 1992;28:2354-5.
6. Kren DE, Rezazadeh AA. Defect and temperature characterisation of InGaP/GaAs and AlGaAs/GaAs HBTs. In: Proceedings of EDMO94, London. 1994. p. 20-5.
7. Lothian JR, Kuo JM, Ren F, Pearton SJ. Plasma and wet chemical etching of InGaP. Journal of Electronic Materials 1992;21:441-5.
8. Chen WL, Chau HF, Tutt M, Ho MC, Kim TS, Henderson T. High-speed InGaP/GaAs HBTs using a simple collector undercut technique to reduce base-collector capacitance. IEEE Electron Device Lett 1997;18:355-7.
9. Mochizuki K, Hirata K, Ouchi K, Tanoue T. InGaP/ GaAs ballistic collection transistors with buried polycrystalline GaAs under base electrode. Electronics Letters 1997;33:1584-5.
10. max of 159 GHz. Solid-State Electronics 1997;41:1611-4.
11. Ahmari DA, Fresina MT, Hartmann QJ, Barlage DW, Feng M, Stillman GE. InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer. IEEE Electron Device Lett 1997;18:559-61.
12. Yang YF, Hsu CC, Ou HJ, Huang TC, Yang ES. Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector. IEEE Transaction on Electron Devices 1997;44:2122-7.
13. Compound Semiconductor, September/October, 1997, p. 15.
14. Compound Semiconductor, May/June, 1997, p. 39.
15. Takahashi T, Sasa S, Kawano A, Iwai T, Fujii T. High-reliability InGaP/GaAs HBTs fabricated by self-aligned process. In: Proceedings of IEDM, San Francisco (USA), IEEE Catalog Number 94CH35706. 1994. p. 191-4.
16. Bahl SR, Camnitz LH, Houng D, Mierzwinski M, Turner J, Lefforge D. Reliability investigation of InGaP/ GaAs heterojunction bipolar transistors. In: Proceedings of IEDM, Washington DC (USA), IEEE Catalog Number 95CH35810. 1995. p. 815-8.
17. Chen WL, Kim TS, Chau HF, Henderson T. High performance InGaP/GaAs HBT with AlGaAs/InGaP emitter passivated ledges for reliable power applications. In: Proceedings of IPRM, Cape Cod (USA), IEEE Catalog Number 97CH36058. 1997. p. 361-4.
18. Beaulieu C, Beggs B, Bennet J, Cook JP, Hobb L, Lester T, Olivier B, Surridge RK. Degradation modes of GaAs HBT and circuits fabricated in InGaP emitter technology. In: Proceedings of GaAs Rel. Workshop, Orlando (USA). 1996. p. 11-4.
19. Pan N, Elliot J, Knowles M, Vu DP, Kishimoto K, Twynam JK, Sato J, Fresina MT, ans Stillman GE. High reliability InGaP/GaAs HBT. IEEE Electron Device Lett 1998;19:115-7.
20. Christianson KA. Reliability of III-V based heterojunction bipolar transistor. Microelectronic Reliab 1998;38:153-61.
21. Llopis O, Dienot J-M, Verdier J, Plana R, Gayral M, Graffeuil J. Analytical investigation of frequency sensitivity in microwave oscillators: application to the computation of phase noise in a dielectric resonator oscillator. Ann Telecommun 1996;51:121-9.
22. Di Forte-Poisson MA, Brylinski C, Delage SL, Blanck H, Floriot D, Cassette S, Chartier E, Pons D, Huber A. GaInP/GaAs HBTs grown by low-pressure MOCVD for voltage-controlled oscillators and power amplifier MMICs. Material Sciences and Engineering 1994;B28:242.
23. Graffeuil J, Plana R. Low frequency noise properties of microwave transistors and its application to circuit design. In: Proceedings of EMC, Cannes (France), Nexus Business Communications Limited. 1994. p. 1-13.
24. Rothe H, Dahlke W. Theory of noisy fourpoles. In: Proceedings of the IRE. 1956. p. 811-8.
25. Henderson T, Ley V, Kim T, Moise T, Hill D. Hydrogen-related burn-in in GaAs/AlGaAs HBTs and implications for reliability. In: Proceedings of IEDM, San Francisco (USA), IEEE Catalog Number 96CH35961. 1996. p. 203-6.
26. Liu W, Fan SK. Near-ideal characteristics of GaInP/ GaAs heterojunction bipolar transistors. IEEE Electron Device Lett 1992;10:510-2.
27. 1-xAs base. IEEE Electron Device Lett 1996;17:226-8.
28. Yang YF, Hsu CC, Yang ES. Integration of GaInP/ GaAs heterojunction bipolar transistors and high electron mobility transistors. IEEE Electron Device Lett 1992;17:363-5.
29. Borgarino M, Plana R, Delage S, Blanck H, Fantini F, Graffeuil J. Early variations of the base current in In/C-doped GaInP/GaAs HBTs. In: Proceedings of IRPS, Reno (USA), IEEE Catalog Number 98CH36173. 1998. p. 92-7.
30. Costa D, Harris JS. Low-frequency noise properties of n-p-n AlGaAs/GaAs heterojunction bipolar transistors. IEEE Trans on Electron Devices 1992;39:2383-94.
31. Tiwari S, Frank DJ. Analysis of the operation of AlGaAs/GaAs HBTs. IEEE Trans on Electron Devices 1989;ED-36:2105.
32. Bahl SB, Camnitz LH, Houng D, Mierzwinski M. Reliability investigation of InGaP/GaAs heterojunction bipolar transistor. IEEE Electron Device Lett 1996;17:446-7.
33. Sze SM. Physics of semiconductor devices. New York: Wiley-Interscience, 1981.
34. Sheu S, Liou JJ, Huang CI. Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs. Microelectron Reliab 1998;38:163-70.
35. Plana R, Escotte L. Noise properties of microwave heterojunction bipolar transistor. In: Proceedings of MIEL, Nis (Yugoslavia), IEEE Catalog Number 97TH8232, vol. 1. 1997. p. 215-22.
36. Van der Ziel A, Zhang X, Pawlikiewicz AH. Location of 1/f noise sources in BJTs and HBJTs. Part I: Theory. IEEE Trans on Electron Devices 1986;33:1371-6.
37. Kirtania AK, Das MB, Chandrasekhar S, Lunardi LM, Qua GJ, Hamm RA, Yang LW. Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors. IEEE Trans on Electron Devices 1996;43:784-91.
38. Tutt MN, Pavlidis D, Khatibzadeh A, Bayraktaroglu B. Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistor. IEEE Trans on Electron Devices 1995;42:219-30.
39. Plana R, Van Haaren B, Escotte L, Delage SL, Blanck H, Graffeuil J. Excess noise reduction in GaInP/GaAs heterojunction bipolar transistor. IEEE Electron Device Letter 1997;18:108-10.