Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1895-1898

  Meneghesso, G ^a   Haddab, Y ^b   Perrino, N ^a   Canali, C ^c   Zanoni, E ^a,c  

^a UNIVERSITY OF PADOVA   (Italy)

^b EPFL   (Switzerland)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; HOT CARRIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; SPECTRUM ANALYSIS;

GATE TO DRAIN ACCESS REGION; HOT ELECTRON TESTS; PERMANENT DEGRADATION EFFECTS; RECOVERABLE DEGRADATION EFFECTS; DRAIN CURRENT ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030274039     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00223-5     Document Type: Article

References (6)

1. E.Zanoni et al., Proc. of ESSDERC '94, pp. 539-542,
2. C.Tedesco et al., Proc. of Int. Symp. GaAs and related compounds,Karuizawa 1992, Inst. hys. Conf. Ser. 129: Chapter 9, pp. 791-796.
3. P. M. Mooney, et al. J. Appl. Phys., Vol. 57 (6), 1928-1931, 1985.
4. M. Takikawa, Jap. J. Appl. Phys., Vol. 26 (12), 2026-2032, 1987.
5. P.M. Mooney et al., J. Appl. Phys. 57 (6), pp-1928-1931, 1985.
6. S.R. Blight et al, Trans, on El. Devices, ED-33, N. 10, 1986, pp. 1447-1453.