Advances in MoS2-Based Field Effect Transistors (FETs)

Nano-Micro Letters

Volumn 7, Issue 3, 2015, Pages 203-218

  Tong, Xin ^a   Ashalley, Eric ^a   Lin, Feng ^a   Li, Handong ^a   Wang, Zhiming M ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Low frequency noise; MoS2 FETs engineering; MoS2 memory devices; MoS2 sensors; Optical properties

Indexed keywords

BAND STRUCTURE; GATE DIELECTRICS; GRAPHENE; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SPURIOUS SIGNAL NOISE; TRANSITION METALS;

DEVICE APPLICATION; DOPING STRATEGIES; FET ARCHITECTURES; FIELD EFFECT TRANSISTOR (FETS); FURTHER DEVELOPMENT; LOW-FREQUENCY NOISE; PHOTORESPONSES; TRANSITION METAL DICHALCOGENIDES;

FIELD EFFECT TRANSISTORS;

EID: 84942425420     PISSN: 23116706     EISSN: 21505551     Source Type: Journal    
DOI: 10.1007/s40820-015-0034-8     Document Type: Review

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