Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics

Journal of Alloys and Compounds

Volumn 615, Issue , 2014, Pages 989-993

  Wang, Xiaozhou ^a   Yang, Shengxue ^b   Yue, Qu ^c   Wu, Fengmin ^a   Li, Jingbo ^a,b  

^a ZHEJIANG NORMAL UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

Author keywords

Charge transfer; Field effect transistor; Gas environment; Photoresponse

Indexed keywords

CALCULATIONS; CHARGE TRANSFER; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; NANOSHEETS;

ELECTRICAL CHARACTERISTIC; FIRST-PRINCIPLES CALCULATION; GAS ENVIRONMENT; LONG WAVELENGTH; PHOTORESPONSE CHARACTERISTICS; PHOTORESPONSES; THEORETICAL CALCULATIONS; TRANSFER ELECTRONS;

MOLYBDENUM COMPOUNDS;

EID: 84905572161     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2014.07.016     Document Type: Article

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