Ambipolar molybdenum diselenide field-effect transistors: Field-effect and hall mobilities

ACS Nano

Volumn 8, Issue 8, 2014, Pages 7923-7929

  Pradhan, Nihar R ^a   Rhodes, Daniel ^a   Xin, Yan ^a   Memaran, Shahriar ^a   Bhaskaran, Lakshmi ^a   Siddiq, Muhandis ^a   Hill, Stephen ^a   M Ajayan, Pulickel ^b   Balicas, Luis ^a  

^a FLORIDA STATE UNIVERSITY   (United States)

^b Rice University   (United States)

Author keywords

field effect transistors; Hall effect; Hall mobility; transition metal dichalcogenides; two dimensional atomic layers

Indexed keywords

ELECTRIC FIELD EFFECTS; HALL EFFECT; HALL MOBILITY; MOLYBDENUM COMPOUNDS; NICKEL COMPOUNDS; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICA; TRANSITION METALS; TRANSPORT PROPERTIES;

ATOMIC LAYER; CHEMICAL VAPOR TRANSPORT; COMPLEMENTARY LOGIC; ELECTRICAL RESPONSE; FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT MOBILITIES; MOLYBDENUM DISELENIDE; TRANSITION METAL DICHALCOGENIDES;

FIELD EFFECT TRANSISTORS;

EID: 84906674861     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn501693d     Document Type: Article

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