Photocurrent response of MoS2 field-effect transistor by deep ultraviolet light in atmospheric and N2 gas environments

ACS Applied Materials and Interfaces

Volumn 6, Issue 23, 2014, Pages 21645-21651

  Khan, M F ^a   Iqbal, M W ^a   Iqbal, M Z ^a   Shehzad, M A ^a   Seo, Y ^a   Eom, Jonghwa ^a  

^a Sejong University   (South Korea)

Author keywords

deep ultraviolet light; electrical measurement; MoS2; photocurrent response; transition metal dichalcogenides

Indexed keywords

ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; LAYERED SEMICONDUCTORS; PHOTOCURRENTS; SULFUR COMPOUNDS; TRANSITION METALS; ULTRAVIOLET RADIATION;

DEEP ULTRAVIOLET; ELECTRICAL MEASUREMENT; MOS2; PHOTOCURRENT RESPONSE; TRANSITION METAL DICHALCOGENIDES;

MOLYBDENUM COMPOUNDS;

EID: 84917707395     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am506716a     Document Type: Article

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