MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

Applied Physics Letters

Volumn 104, Issue 11, 2014, Pages

  Azcatl, Angelica ^a   McDonnell, Stephen ^a   Santosh, K C ^a   Peng, Xin ^a   Dong, Hong ^a   Qin, Xiaoye ^a   Addou, Rafik ^a   Mordi, Greg I ^a   Lu, Ning ^a   Kim, Jiyoung ^a   Kim, Moon J ^a   Cho, Kyeongjae ^a   Wallace, Robert M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CARBON CONTAMINATION; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; FUNCTIONALIZATIONS; NUCLEATION SITES; ROOM TEMPERATURE; THIN-FILM DEPOSITIONS; ULTRAVIOLET-OZONE;

ATOMIC LAYER DEPOSITION; DEPOSITION; MOLYBDENUM; NUCLEATION; OXYGEN; SULFUR;

MOLYBDENUM COMPOUNDS;

EID: 84897886364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4869149     Document Type: Article

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